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| DISCRETE SEMICONDUCTORS DATA SHEET BSS83 MOSFET N-channel enhancement switching transistor Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification MOSFET N-channel enhancement switching transistor DESCRIPTION Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances. The transistor is protected against excessive input voltages by integrated back-to-back diodes between gate and substrate. APPLICATIONS * analog and/or digital switch * switch driver PINNING 1 2 3 4 = substrate (b) = source = drain = gate Fig.1 Simplified outline and symbol. 1 Top view 2 MAM389 BSS83 Marking code: BSS83 = M74 handbook, halfpage 4 3 d b g s Note 1. Drain and source are interchangeable. QUICK REFERENCE DATA Drain-source voltage Source-drain voltage Drain-substrate voltage Source-substrate voltage Drain current (DC) Total power dissipation up to Tamb = 25 C Gate-source threshold voltage VDS = VGS; VSB = 0; ID = 1 A Drain-source ON-resistance VGS = 10 V; VSB = 0; ID = 0.1 mA Feed-back capacitance VGS = VBS = -15 V; VDS = 10 V; f = 1 MHz Crss typ. 0.6 pF RDSon < 45 VGS(th) > < 0.1 V 2.0 V VDS VSD VDB VSB ID Ptot max. max. max. max. max. max. 10 V 10 V 15 V 15 V 50 mA 230 mW April 1991 2 Philips Semiconductors Product specification MOSFET N-channel enhancement switching transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Source-drain voltage Drain-substrate voltage Source-substrate voltage Drain current (DC) Total power dissipation up to Tamb = 25 Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient in free air(1) Rth j-a = C(1) VDS VSD VDB VSB ID Ptot Tstg Tj max. max. max. max. max. max. max. 10 V 10 V 15 V 15 V BSS83 50 mA 230 mW 125 C -65 to + 150 C 430 K/W April 1991 3 Philips Semiconductors Product specification MOSFET N-channel enhancement switching transistor CHARACTERISTICS Tamb = 25 C unless otherwise specified Drain-source breakdown voltage VGS = VBS = -5 V; ID = 10 nA Source-drain breakdown voltage VGD = VBD = -5 V; ID = 10 nA Drain-substrate breakdown voltage VGB = 0; ID = 10 nA; open source Source-substrate breakdown voltage VGB = 0; ID = 10 nA; open drain Drain-source leakage current VGS = VBS = -2 V; VDS = 6,6 V Source-drain leakage current VGD = VBD = -2 V; VSD = 6,6 V Forward transconductance at f = 1 kHz VDS = 10 V; VSB = 0; ID = 20 mA Gate-source threshold voltage VDS = VGS; VSB = 0; ID = 1 A Drain-source ON-resistance ID = 0,1 mA; VGS = 5 V; VSB = 0 VGS = 10 V; VSB = 0 VGS = 3,2 V; VSB = 6,8 V (see Fig.4) Gate-substrate zener voltages VDB = VSB = 0; -IG = 10 A VDB = VSB = 0; +IG = 10 A Capacitances at f = 1 MHz VGS = VBS = -15 V; VDS = 10 V Feed-back capacitance Input capacitance Output capacitance Switching times (see Fig.2) VDD = 10 V; Vi = 5 V ton toff Note 1. Device mounted on a ceramic substrate of 8 mm x 10 mm x 0,7 mm. typ. typ. Crss Ciss Coss typ. typ. typ. VZ(1) VZ(2) > > RDSon RDSon RDSon < < typ. < VGS(th) > < gfs > typ. ISDoff < IDSoff < V(BR)SBO > V(BR)DBO > V(BR)SDX > V(BR)DSX > BSS83 10 V 10 V 15 V 15 V 10 nA 10 nA 10 mS 15 mS 0,1 V 2,0 V 70 45 80 120 12,5 V 12,5 V 0,6 pF 1,5 pF 1,0 pF 1,0 ns 5,0 ns April 1991 4 Philips Semiconductors Product specification MOSFET N-channel enhancement switching transistor Pulse generator: Ri tr tf tp = < < = < 50 0,5 ns 1,0 ns 20 ns 0,01 BSS83 handbook, full pagewidth VDD 50 0.1 F Vo 630 INPUT 90% 90% 10% tr tf ton 90% 10% toff 90% Vi 50 T.U.T OUTPUT MBK297 10% 10% MBK296 Fig.2 Switching times test circuit and input and output waveforms. handbook, halfpage 60 MDA250 handbook, halfpage 1.2 MDA251 ID (mA) 40 VGS = 4.5 V 4V ID (mA) 0.8 3.5 V 3V VGS = 10 V 5V 4V 3.2 V 3V 20 2.5 V 2V 0.4 2V 0 0 4 8 VDS (V) 12 0 0 40 80 VDSon (mV) 120 Tj = 25 C. Tj = 25 C. Fig.3 VSB = 0; typical values. Fig.4 VSB = 6,8 V; typical values. April 1991 5 Philips Semiconductors Product specification MOSFET N-channel enhancement switching transistor BSS83 handbook, halfpage 50 MDA252 ID (mA) 40 handbook, halfpage 12 MDA253 ID (mA) 8 VSB = 0 V 4 V 12 V 8V 30 20 4 10 0 0 1 2 3 VGS (V) 4 0 0 1 2 3 VGSth (V) 4 Tj = 25 C. Tj = 25 C. Fig.5 VDS = 10 V; VBS = 0; typical values. Fig.6 VDS = VGS = VGS(th). handbook, halfpage 1.2 MDA254 ID (mA) 0.8 VGS = 10 V 5 V 4 V 3V 2V 0.4 0 0 20 40 60 80 100 VDSon (mV) Tj = 25 C. Fig.7 VSB = 0; typical values. April 1991 6 Philips Semiconductors Product specification MOSFET N-channel enhancement switching transistor PACKAGE OUTLINE Plastic surface mounted package; 4 leads BSS83 SOT143B D B E A X y vMA HE e bp wM B 4 3 Q A A1 c 1 b1 e1 2 Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT143B REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 April 1991 7 Philips Semiconductors Product specification MOSFET N-channel enhancement switching transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values BSS83 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1991 8 |
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